Flexible Masking Tape

Features & Benefits: • Precise & intricate masking • No paint bleed or annoying paint lines • U.V. protected for masking in direct sunlight • 1mm x 18m x2 [PMA3001] • 2mm x 18m x2 [PMA3002] • 3mm x 18m x2 [PMA3003] • 6mm x 18m x2 [PMA3006] • 10mm x 18m x2 [PMA3010] • Twin Pack

文件：247.96 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

MOSFET driver

1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration n Application-optimized pinout n Space-saving s

文件：295.02 Kbytes 页数：17 Pages

NEXPERIA

安世

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 3001 is a common base transistor capable of providing 1 Watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed telemetry and telecommunications applications. It uses gold metalization and diffused ballasting to p

文件：178.29 Kbytes 页数：4 Pages

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KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

文件：66.26 Kbytes 页数：2 Pages

Molex

莫仕

1 Watt - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

文件：213.86 Kbytes 页数：4 Pages

GHZTECH