首页 >PLC600R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LowPassFilter | MINI Mini-Circuits | MINI | ||
LOWPASSFILTERS | MINI Mini-Circuits | MINI | ||
LowPassFilter | MINI Mini-Circuits | MINI | ||
Low-voltageavalancheregulatordiodes DESCRIPTION HighperformancevoltageregulatordiodesinsmallSOT23plasticSMDpackages. TheseriesconsistsofPLVA650AtoPLVA668A. FEATURES •Verylowdynamicimpedanceatlowcurrents:approximately1⁄20ofconventionalseries •Hardbreakdownknee •Lownoise:approximat | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Singleanddualoutput0.5to1WattNominalinputDC/DCconverters | ARTESYN Artesyn Embedded Technologies | ARTESYN | ||
20V,dualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultr | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,dualN-channelTrenchMOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,dualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Leadlessultrasmallandultr | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
20V,N-channelTrenchMOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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