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HCD65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCD65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HCS65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCU65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IIPD65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP65R660CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R660CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPB65R660CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI65R660CFD

iscN-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
PANJIT
23+
TO-220
10000
公司只做原装正品
询价
PANJIT/ 强茂
TO-220
22+
6000
十年配单,只做原装
询价
PANJIT/ 强茂
23+
TO-220
6000
原装正品,支持实单
询价
PANJIT/ 强茂
22+
TO-220
25000
只做原装进口现货,专注配单
询价
PANJIT
24+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Panjit International Inc.
23+
SMD
67000
原装正品实单可谈 库存现货
询价
PANJIT/强茂
23+
TO-TO-220
289900
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Hammond
2020+
N/A
155
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Hammond
22+
NA
155
加我QQ或微信咨询更多详细信息,
询价
PEC品牌
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
更多PJP65R660供应商 更新时间2024-10-31 14:30:00