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HCD65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCD65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HCS65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCU65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IIPD65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP65R660CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA65R660CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R660CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R660CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
TAIYO/太诱
23+
SMD
50000
全新原装正品现货,支持订货
询价
TAIYO/太诱
22+
SMD
3000
原装正品,支持实单
询价
TAIYO/太诱
23+
SOP-8
89630
当天发货全新原装现货
询价
TAIYO/太诱
23+
NA/
1300
优势代理渠道,原装正品,可全系列订货开增值税票
询价
TAIYO-太诱
24+25+/26+27+
SMD-贴片
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
TAIYO/太诱
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TAIYO/太诱
SMD
287200
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TAIYO/太诱
24+
SMD
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
TAIYO/太诱
2018+
SMD
880000
明嘉莱只做原装正品现货
询价
TAIYO/太诱
23+
SMD
6000
回收手机ic/滤波器13480122620
询价
更多PJF65R660供应商 更新时间2024-6-5 14:01:00