N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP83N03LT in a SOT78 (TO-220AB) PHB83N03LT in a SOT404 (D2-PAK) PHE83N03LT in a SOT226 (I2-PAK). Features ■ Low on-state resistance ■ Fast s

文件：308.19 Kbytes 页数：15 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

恩XP

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD83N03LT in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC conv

文件：282.98 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP83N03LT in a SOT78 (TO-220AB) PHB83N03LT in a SOT404 (D2-PAK) PHE83N03LT in a SOT226 (I2-PAK). Features ■ Low on-state resistance ■ Fast s

文件：308.19 Kbytes 页数：15 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：281.04 Kbytes 页数：2 Pages

ISC

无锡固电