N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold ■ Optimized for use in DC-to-DC converters ■ 100 RG tested ■ Lead-free package ■ Very low switching and

文件：92.82 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS logic level FET

General description\nLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. ■ Logic level threshold\n■ Optimized for use in DC-to-DC converters\n■ 100 % RG tested\n■ Lead-free package\n■ Very low switching and conduction losses\n■ 100 % ruggedness testedApplications\n■ DC-to-DC converters\n■ Voltage regulators\n■ Switched-mode power supplies\n■ PC MotherboardsQuick ;

恩XP

恩智浦

The ESD tests are used to classify the electrostatic discharge of microcircuits.

文件：34.75 Kbytes 页数：2 Pages

RichTek

立锜科技

Weather and UV resistant radome

文件：737.01 Kbytes 页数：2 Pages

LSTD

莱尔德

900 MHz transmit modulator and 2.2 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

文件：134.99 Kbytes 页数：23 Pages

PHI

飞利浦