PNP switching transistor

DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PH2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

文件：45.39 Kbytes 页数：8 Pages

PHI

飞利浦

PNP switching transistors

DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

文件：45.59 Kbytes 页数：8 Pages

PHI

飞利浦

40V, 600 mA, PNP switching transistor

1. General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222 60V variant: PMBT2907A 2. Features and benefits • Single general-purpose switching transistor • AEC-Q101 qualified 3. Applications • Switching

文件：736.98 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

808 MHz Center Frequency

文件：44.39 Kbytes 页数：2 Pages

KR

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

文件：691.66 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

文件：103.01 Kbytes 页数：4 Pages

ONSEMI

安森美半导体