首页 >PFF4N60C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOStransistorsAvalancheenergyrated | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistorsAvalancheenergyrated | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES •Repet | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
600VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON |
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