| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N50Eissupplied | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableoff-statecharacteristics,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePower | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N50Eissupplied | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX3N50Eissupplied | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
3A,450Vand500V,3Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | Intersil Intersil Corporation | Intersil | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
3A,450Vand500V,3Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | Intersil Intersil Corporation | Intersil | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFET FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFET FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-CHANNELenhancementmodepowermostransistor N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2.5Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS/帕沃英蒂格 |
24+23+ |
TO-252 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
POWER |
23+ |
NA/ |
42580 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
POWER |
23+ |
TO-252 |
42580 |
询价 | |||
PD |
23+ |
119215 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
POWER |
22+ |
SOT-252 |
34137 |
只做原装进口现货 |
询价 | ||
POWER |
22+ |
TO-252 |
20000 |
深圳原装现货正品有单价格可谈 |
询价 | ||
POWER |
20+ |
SOT-252 |
65300 |
一级代理/放心购买! |
询价 | ||
POWER |
23+ |
TO-252 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
KEC |
23+ |
SOT23 |
15000 |
全新原装现货,价格优势 |
询价 | ||
ON/安森美 |
2122+ |
TO-3P |
12000 |
全新原装正品假一赔十 |
询价 |
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