NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.12964 Mbytes 页数：19 Pages

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NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：912 Kbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)

1. General description NPN/PNP Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces c

文件：280.66 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)

1. General description NPN/NPN Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PRMD12. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifi

文件：252.27 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司