PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

General description PNP resistor-equipped transistors. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General purpose switching and amplification ■ Circuit drivers ■ Inverter and interface circuits

文件：122.21 Kbytes 页数：18 Pages

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NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.98 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：E9；Package：SC-101；PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：236.95 Kbytes 页数：19 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00101101；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = 10 k廓

文件：627.58 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm

PNP resistor-equipped transistors. • Built-in bias resistors\n• Reduces component count\n• Simplifies circuit design\n• Reduces pick and place costs\n• AEC-Q101 qualified;

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安世

PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144VMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

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Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司