| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PDD6966A | Middle & Low Voltage MOSFET | PDT | PDT | |
PDD6966A | MOSFETs | Potens 博盛半导体 | Potens | |
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ 文件：80.9 Kbytes 页数：5 Pages | Fairchild 仙童半导体 | Fairchild | ||
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ 文件：80.9 Kbytes 页数：5 Pages | Fairchild 仙童半导体 | Fairchild | ||
Dual N-Channel 2.5-V (G-S) MOSFET 文件：104.47 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
技术参数
- 组态：
Single
- MOS类型：
N
- VDS(V)：
60
- VGS(V)：
±25
- Vth(V)：
2/3/4
- RDS(ON)(mΩ)max.at VGS=10V：
7.5/8.8
- Ciss(pF)：
1690
- Coss(pF)：
294
- Crss(pF)：
90
- Qg(nC)_10V：
26.9
- Qgs(nC)：
10.7
- Qgd(nC)：
6.5
- Rg W：
1.3
- EAS (mJ)：
238
- ID(A)_Tc=25℃：
55
- ID(A)_Tc=100℃：
34.8
- PD(W)_Tc=25℃：
102
- ESD Diode：
X
- Schokkty Diode：
X
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
TO252 |
986966 |
国产 |
询价 | ||
POTENS/博盛 |
2511 |
TO252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
POTENS/博盛 |
24+ |
TO252 |
98000 |
原装现货假一罚十 |
询价 |
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