首页 >PD4542A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMAFemaleConnectorSolderAttachment | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
SMAFemaleConnectorSolderAttachment0.062inchEndLaunchPCB,.030inchDiameter | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
HighPowerInfraredEmitter(940nm)inSMR®Package Features -Package:blackepoxy -ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) -HighPowerInfraredLED -SMR®(SurfaceMountRadial)package -SamepackageasphotodiodeSFH2500 -Shortswitchingtimes | AMSCOams AG 艾迈斯欧司朗艾迈斯欧司朗股份公司 | AMSCO | ||
HighPowerInfraredEmitter(940nm)inSMR | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
HighPowerInfraredEmitter(940nm)inSMR짰Package | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
HighPowerInfraredEmitter(940nm)inSMR®Package Features -Package:blackepoxy -ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) -HighPowerInfraredLED -SMR®(SurfaceMountRadial)package -SamepackageasphotodiodeSFH2500 -Shortswitchingtimes | AMSCOams AG 艾迈斯欧司朗艾迈斯欧司朗股份公司 | AMSCO | ||
HighPowerInfraredEmitter(940nm)inSMR®Package Features -Package:blackepoxy -ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) -HighPowerInfraredLED -SMR®(SurfaceMountRadial)package -SamepackageasphotodiodeSFH2500 -Shortswitchingtimes | AMSCOams AG 艾迈斯欧司朗艾迈斯欧司朗股份公司 | AMSCO | ||
30VComplementaryPowerTrenchMOSFET GeneralDescription ThiscomplementaryMOSFETdeviceisproducedusingFairchild’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •Q1:N-Channel 6A,30VRDS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VComplementaryPowerTrenchMOSFET GeneralDescription ThiscomplementaryMOSFETdeviceisproducedusingFairchild’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •Q1:N-Channel 6A,30VRDS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VComplementaryPowerTrenchMOSFET GeneralDescription ThiscomplementaryMOSFETdeviceisproducedusingFairchild’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •Q1:N-Channel 6A,30VRDS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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