Accurate RTC with integrated quartz crystal for industrial

General description The PCF2129T is a CMOS1 Real Time Clock (RTC) and calendar with an integrated Temperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartz crystal optimized for very high accuracy and very low power consumption. The PCF2129T has a selectable I2C-bus or SP

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恩XP

Accurate RTC with integrated quartz crystal for industrial applications

文件：957.25 Kbytes 页数：86 Pages

PHI

飞利浦

Accurate RTC with integrated quartz crystal for industrial

The PCF2129 is a CMOS Real Time Clock (RTC) and calendar with an integratedTemperature Compensated Crystal (Xtal) Oscillator (TCXO) and a 32.768 kHz quartzcrystal optimized for very high accuracy and very low power consumption. The PCF2129has a selectable I²C-bus or SPI-bus, a backup battery switch- Operating temperature range from -40 °C to +85 °C\nTemperature Compensated Crystal Oscillator (TCXO) with integrated capacitors\nTypical accuracy:PCF2129AT: ±3 ppm from -15 °C to +60 °C\nPCF2129T: ±3 ppm from -30 °C to +80 °C\nIntegration of a 32.768 kHz quartz crystal and oscillator in the same pac;

恩XP

恩智浦

Remote Fan Controller IC?

Description PT2129A is a high performance electronic fan controller LSI. Speed control, on-timer, off-timer, rhythm wind, sleep mode, head swing and/or light controls are all built into a single chip. Indicator LED output, buzzer output, key control input, as well as remote control decoding cir

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PTC

普诚科技

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

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RFMD

威讯联合

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

文件：83.94 Kbytes 页数：6 Pages

RFMD

威讯联合