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PC48F4400P0X1U0中文资料PDF规格书

PC48F4400P0X1U0
厂商型号

PC48F4400P0X1U0

功能描述

StrataFlash짰 Cellular Memory

文件大小

2.1332 Mbytes

页面数量

139

生产厂商 NUMONYX
企业简称

NUMONYX恒忆

中文名称

恒忆官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-8 22:30:00

PC48F4400P0X1U0规格书详情

Introduction

This datasheet contains information about the Numonyx™ Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.

Product Features

„ High Performance Read-While-Write/Erase

— Burst frequency at 66 MHz (zero wait states)

—60ns Initial access read speed

— 11 ns Burst mode read speed

— 20 ns Page mode read speed

— 4-, 8-, 16-, and Continuous-Word Burst mode reads

— Burst and Page mode reads in all Blocks, across all partition boundaries

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 µs/word „

Security

—128-BitOTP Protection Register:

64 unique pre-programmed bits + 64 user-programmable bits

— Absolute Write Protection with VPP at ground

— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability„

Quality and Reliability

—Temperature Range:–40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX™ IX Process

— 130 nm ETOX™ VIII Process

Architecture

— Multiple 4-Mbit partitions

— Dual Operation: RWW or RWE

— Parameter block size = 4-Kword

— Main block size = 32-Kword

— Top or bottom parameter devices

—16-bit wide data bus

Software

— 5 µs (typ.) Program and Erase Suspend latency time

— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible

— Programmable WAIT signal polarity

Packaging and Power

— 90 nm: 32- and 64-Mbit in VF BGA

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

—VCC= 1.70 V to 1.95 V

—VCCQ(90 nm) = 1.7 V to 1.95 V

—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V

—VCCQ(130 nm) = 1.35 V to 2.24 V

— Standby current (130 nm): 8 µA (typ.)

— Read current: 8 mA (4-word burst, typ.)

产品属性

  • 型号:

    PC48F4400P0X1U0

  • 制造商:

    NUMONYX

  • 制造商全称:

    Numonyx B.V

  • 功能描述:

    StrataFlash㈢ Cellular Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
2020+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INTEL
21+
BGA
35200
一级代理/放心采购
询价
MRON/美光
23+
NA/
4229
原厂直销,现货供应,账期支持!
询价
MICRON/美光
BGA
98900
原厂集团化配单-有更多数量-免费送样-原包装正品现货-
询价
INTEL
2320+
BGA
562000
16年只做原装原标渠道现货终端BOM表可配单提供样品
询价
INTEL/英特尔
08+
NA
880000
明嘉莱只做原装正品现货
询价
INTEL
1315+
BGA
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MICRON/美光
23+
BGA
96880
只做原装,欢迎来电资询
询价
MICRON
21+
BGA/TSOP
50000
特价来袭!美光一级代理入驻114电子网
询价
INTEL
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价