NPN medium power transistor

DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z. FEATURES • High current (max. 10 A) • Low voltage (max. 40 V) • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers

文件：44.32 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits • Batte

文件：153.64 Kbytes 页数：9 Pages

恩XP

丝印：PB4540；Package：SOT223；40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capabilities •Improved device reliability due to reduced heat generation. APPLICATIONS •Supply line switching circuits •Battery management applications •DC/DC converter applications •Strobe flash units •Heavy duty battery

文件：359.98 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits • Batte

文件：153.64 Kbytes 页数：9 Pages

恩XP

NPN medium power transistor

DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z. FEATURES • High current (max. 10 A) • Low voltage (max. 40 V) • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers

文件：44.32 Kbytes 页数：8 Pages

PHI

飞利浦

40 V low VCEsat NPN transistor

文件：153.64 Kbytes 页数：9 Pages

PHI

飞利浦

40 V low VCEsat NPN transistor

NPN low VCEsat transistor in a SOT223 plastic package.\n PNP complement: PBSS5540Z. • Low collector-emitter saturation voltage\n• High current capabilities\n• Improved device reliability due to reduced heat generation.\n• AEC-Q101 qualified;

Nexperia

安世

40 V low VCEsat NPN transistor

NPN low VCEsat transistor in a SOT223 plastic package.\n PNP complement: PBSS5540Z

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 5A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司