2A NPN Low VCE(sat) (BISS) Transistor

FEATURES ● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation. APPLICATIONS ● Supply line switching circuits ● Battery management applications ● DC/DC converter applications ● Strobe flash units ● Heavy duty batt

文件：187.17 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

通用三极管

Bluecolour

蓝彩电子

NPN小信号三极管

CBI

创基电子

丝印：M3；Package：SOT457；40 V low VCEsat NPN/PNP transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High collector current gain hFE at high IC •High efficiency leading to reduced heat generation •Reduced printed-circuit board area requirements. APPLICATIONS •Power management: –Compl

文件：704.94 Kbytes 页数：13 Pages

NEXPERIA

安世

40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • R

文件：473.7 Kbytes 页数：12 Pages

恩XP

40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • R

文件：108.8 Kbytes 页数：12 Pages

PHI

飞利浦

40 V; 2 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistor

文件：270.34 Kbytes 页数：7 Pages

恩XP

NPN General Purpose Transistor

Features Supply line switching circuits « DC/DC converter applications. « Battery management applications

文件：2.18981 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

文件：185.76 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

文件：185.33 Kbytes 页数：8 Pages

NEXPERIA

安世