PBSS4240

2A NPN Low VCE(sat) (BISS) Transistor

FEATURES ●Lowcollector-emittersaturationvoltage ●Highcurrentcapability ●Improveddevicereliabilityduetoreducedheatgeneration. APPLICATIONS ●Supplylineswitchingcircuits ●Batterymanagementapplications ●DC/DCconverterapplications ●Strobeflashunits ●Heavydutybatt

PBSS4240

通用三极管;

PBSS4240

NPN小信号三极管;

PBSS4240DPN

40 V low VCEsat NPN/PNP transistor

DESCRIPTION NPN/PNPlowVCEsattransistorpairinaSOT457(SC-74)plasticpackage. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •HighcollectorcurrentgainhFEathighIC •Highefficiencyleadingtoreducedheatgeneration •R

PBSS4240DPN

Marking：M3；Package：SOT457；40 V low VCEsat NPN/PNP transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •HighcollectorcurrentgainhFEathighIC •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardarearequirements. APPLICATIONS •Powermanagement: –Compl

PBSS4240T

Marking：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5240T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreducedh

PBSS4240T

40 V; 2 A NPN low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors.\n• AEC-Q101 qualified\n;

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T.\n

PBSS4240T-Q

Marking：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5240T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improveddevicereliabilityduetoreduced

PBSS4240V

Marking：42；Package：SOT666；40 V low VCEsat NPN transistor

FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardarearequirements. APPLICATIONS •Powermanagement: –DC-

PBSS4240X

Marking：S47；Package：SOT89；40 V, 2 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89Surface-MountedDevice(SMD)plasticpackage.PNPcomplement:PBSS5240X. Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa