RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION · High gain bandwidth product fT = 8 GHz (Typ) @ VCE=6V,IC=30mA,f=1GHz · High gain, low noise figure ︱S21e︱2 = 12dB @ VCE=6V,IC=30mA,f=1GHz NF = 2dB( Typ ) @ VCE=6V,IC=5mA,f=1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

文件：317.54 Kbytes 页数：2 Pages

ISC

无锡固电

UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES •

文件：144.33 Kbytes 页数：16 Pages

PHI

飞利浦

NPN UHF宽频带晶体管

Not recommended for new design in, please use replacement BFU530A.\nSilicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar det Gold metallization ensures excellent reliability\nHigh gain\nLow distortion\nLow noise\nSmall package;

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恩智浦

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF SMALL SIGNAL BIPOLAR TRANSIST

恩XP

UHF wideband transistor

文件：121.45 Kbytes 页数：16 Pages

PHI

飞利浦

UHF wideband transistor

文件：121.45 Kbytes 页数：16 Pages

JMNIC

锦美电子

UHF wideband transistor

文件：160.89 Kbytes 页数：13 Pages

JMNIC

锦美电子

UHF wideband transistor

文件：160.89 Kbytes 页数：13 Pages

PHI

飞利浦

NPN UHF宽频带晶体管

硅NPN晶体管，采用表面贴装3针SOT23封装。晶体管主要设计用于RF前端GHz范围内的宽带应用，比如模拟和数字移动电话、无绳电话、雷达探测器、传呼机和卫星电视调谐器。 金属化镀金确保极佳的可靠性\n高增益\n低失真\n低噪声\n小型封装;

恩XP

恩智浦