3.0A BRIDGE RECTIFIER

Features • High Current Capability • Surge Overload Rating to 50A Peak • High Case Dielectric Strength of 1500V • Ideal for Printed Circuit Board Application • UL Listed Under Recognized Component Index, File Number E94661

文件：51.17 Kbytes 页数：2 Pages

DIODES

美台半导体

Bridge Rectifiers

Diodes

美台半导体

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

60 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：279.48 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：320.65 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司