首页 >PBP306>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3.0ABRIDGERECTIFIER Features •HighCurrentCapability •SurgeOverloadRatingto50APeak •HighCaseDielectricStrengthof1500V •IdealforPrintedCircuitBoardApplication •ULListedUnderRecognizedComponentIndex,FileNumberE94661 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100V,4.5ANPNlowVCEsat(BISS)transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
100V,4.5ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100V,5.1ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100V,5.1ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100V,3.7APNPlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100V,4.1APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
100V,4.1APNPlowVCEsat(BISS)transistor Featuresandbenefits Lowcollector-emittersaturation voltageVCEsat Highcollectorcurrentcapability ICandICM Highcollectorcurrentgain(hFE)at highIC Highefficiencyduetolessheat generation SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100V,4.1APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Silicon-PowerRectifiers Silicon-PowerRectifiers •Nominalcurrent35A •Repetitivepeakreversevoltage50~1000V •MetalcaseDO-5 •Weightapprox.6g •Standardpolarity:Cathodetostud •IndexR:Anodetostud •Standardpackaging:bulk | DiotecDiotec Semiconductor 德欧泰克 | Diotec |
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