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GAL22V10D-10LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJ

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJN

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LP

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思半导体

GAL22V10D-10LP

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思半导体

供应商型号品牌批号封装库存备注价格
CYP
23+
PALCE22V10D-
13528
振宏微原装正品,假一罚百
询价
CYPRESS
2020+
PLCC
350000
100%进口原装正品公司现货库存
询价
CYPRESS
22+
PLCC
4918
原装现货
询价
CYPRESS
23+
PLCC
8000
只做原装现货
询价
Lattice
99
5000
公司存货
询价
1305+
PLCC
12000
公司特价原装现货
询价
LATTICE
22+
PLCC
2978
100%全新原装公司现货供应!随时可发货
询价
CYPRESS
23+
NA
6500
全新原装假一赔十
询价
CYPRESS
20+
N/A
8800
只做原装正品
询价
Lttice
22+
PLCC
3000
原装现货
询价
更多PALCE22V10D-10LMB供应商 更新时间2024-5-17 18:06:00