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GAL22V10D-20LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPNI

AllDevicesDiscontinued

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

GAL22V10D-20LPNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

供应商型号品牌批号封装库存备注价格
CYPRESS
23+
DIP
1171
全新原装
询价
CYPRESS
22+
DIP24
5792
原装现货
询价
CYPRESS
23+
DIP24
8000
只做原装现货
询价
CYPRESS
23+
DIP24
7000
询价
CYPRESS
2021+
CDIP
1600
自家库存,百分之百原装
询价
CYPRESS
23+
DIP
8560
受权代理!全新原装现货特价热卖!
询价
CYPRESS
三年内
1983
纳立只做原装正品13590203865
询价
CYPRESS/赛普拉斯
2021+
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
询价
英飞凌/赛普拉斯
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
更多PALC22V10D-20PC供应商 更新时间2024-9-20 16:47:00