FCH125N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=29A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=125mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCH125N60E

Telecom/SeverPowerSupplies

FCP125N60E

Telecom/SeverPowerSupplies

PJMP125N60FRC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:125mΩ FastrecoveryQrr/Trrperformance HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

SIHA125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES •4thgenerationEseriestechnology •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

SIHB125N60EF

EFSeriesPowerMOSFETWithFastBodyDiode