isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.33 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：177.97 Kbytes 页数：4 Pages

SHINDENGEN

Power MOSFETs　SMD

•SMD\n•Low Ron\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.48 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：454.46 Kbytes 页数：4 Pages

SHINDENGEN

SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

文件：78.26 Kbytes 页数：4 Pages

EIC