P5N

包装：散装 类别：工具 螺丝和螺母起子 描述：NUT DRIVER HEX SOCKET 5/32\

P5N60FI

N-Channel enhancement mode power mos transistor

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.33Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

P5NA60FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

P5NA80

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

P5NB100FP

N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

P5NB40FP

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofPowerMOSFETswithoutstandingperformance.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,exc

P5NB60

N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

P5NB80

N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances. ■TYPICALRDS(on)=1.8Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■VERYLOWINTRINSICCAPACITANCES

P5NC50

N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS

P5NC50FP

N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS