P1N120规格书应用电路供应代理仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N120	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HGTD1N120BNS	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTD1N120BNS	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTD1N120BNS	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTD1N120BNS	文件：312.88 Kbytes Page：2 Pages	TrenchField-StopTechnologyIGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
HGTD1N120CNS	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120BN	文件：97.6 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP1N120BN	文件：71.96 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120BN	文件：96.46 Kbytes Page：8 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP1N120BND	文件：75.75 Kbytes Page：7 Pages	5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120CN	文件：77.16 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBT TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP1N120CND	文件：80.17 Kbytes Page：7 Pages	6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IXTA1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTA1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division	IXYS
IXTP1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTP1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division	IXYS
IXTY1N120P	文件：130.84 Kbytes Page：4 Pages	N-ChannelEnhancementMode Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •LowQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •DC-DCConverters •	IXYS IXYS Integrated Circuits Division	IXYS
IXTY1N120P	文件：315.25 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
STP1N120	文件：136.31 Kbytes Page：10 Pages	channel1200V-30廓-500mA-TO-220Zener-protectedSuperMESH??PowerMOSFET Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
UG1N120	文件：290.58 Kbytes Page：3 Pages	1200VNPTSERIESN-CHANNELIGBT	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市振宏微科技有限公司	P1N120	ST	23+	TO220	16900	支持样品,原装现货,提供技术支持!	询价
深圳市赛特兴科技有限公司	P1N120	ST	23+	TO220	16900	正规渠道,只有原装!	询价
中科航电（深圳）电子集团有限公司	P1N120	ST		TO220	36900	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市星佑电子有限公司	P1N120	ST	22+	TO220	16900	支持样品原装现货提供技术支持!	询价
深圳市惊羽科技有限公司	P1N1209DH	PHI-CON	24+25+/26+27+	车规-电源模块	3280	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多P1N120供应商更新时间2024-6-19 14:26:00

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