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STB16NS25

N-CHANNEL250V-0.23W-16AD2PAKMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB16NS25

N-CHANNEL250V-0.23ohm-16AD2PAKMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NS25

N-CHANNEL250V-0.23ohm-16ATO-220/TO-220FPMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP16NS25FP

N-CHANNEL250V-0.23ohm-16ATO-220/TO-220FPMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersfor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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