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P1065ETF

N-ChannelEnhancementModeFieldEffectTransistor

NIKOSEMNIKO SEMICONDUCTOR CO., LTD.

尼克森尼克森微電子股份有限公司

P1065ETF

N-ChannelEnhancementModeMOSFET

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

P1065ETFS

N-ChannelEnhancementModeMOSFET

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

P1065ETFS

N-ChannelEnhancementModeFieldEffectTransistor

NIKOSEMNIKO SEMICONDUCTOR CO., LTD.

尼克森尼克森微電子股份有限公司

P1065VD

N-ChannelHighVoltageModeFieldEffectTransistor

NIKOSEMNIKO SEMICONDUCTOR CO., LTD.

尼克森尼克森微電子股份有限公司

P1065VTF

N-ChannelHighVoltageModeFieldEffectTransistor

NIKOSEMNIKO SEMICONDUCTOR CO., LTD.

尼克森尼克森微電子股份有限公司

PA-1065

COMPACTMIXERAMPLIFIER

SOVICO

SOVICO corp.

PCDD1065GB

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability CompetitiveVF1.3Vatratedcurrent LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PCDP1065GB

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability CompetitiveVF1.3Vatratedcurrent LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PCDP1065GC

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability LowSwitchingLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard Application PFC,UPS,PV

PANJITPan Jit International Inc.

強茂強茂股份有限公司

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