OSG07N65F资料使用说明书供应代理华瑞CET-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
07N65	文件：2.17868 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AM07N65	文件：746.2 Kbytes Page：10 Pages	MOSFET650V,7AN-CHANNEL FEATURE •RoHSCompliant •RDS(ON),typ.=1.2Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower	AITSEMIAiT Semiconductor Inc. AiT創瑞科技	AITSEMI
CEB07N65	文件：416.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB07N65A	文件：822.56 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB07N65LN	文件：518.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB07N65SA	文件：544.5 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED07N65A	文件：628.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED07N65LN	文件：507.84 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED07N65SA	文件：536.62 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF07N65	文件：416.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF07N65A	文件：822.56 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF07N65LN	文件：518.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF07N65SA	文件：544.5 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP07N65	文件：416.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP07N65	文件：1.68263 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP07N65A	文件：1.80142 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP07N65A	文件：822.56 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP07N65A	文件：336.06 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP07N65LN	文件：518.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP07N65SA	文件：544.5 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	OSG07N65FF	ORIENTAL SEMI/东微	24+	TO-220F	12500	东微全系列在售	询价
深圳市莱克讯科技有限公司	OSG080N02	HUAWEI	2017+	SFP	28659	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
中天科工半导体（深圳）有限公司	OSG105F	OPTO-SENS	20+	标准	88720	红外全新原装主营-可开原型号增税票	询价
贸泽芯城（深圳）电子科技有限公司	OSG105F	OPTO-SENSOR		DIP-4	52628	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市华斯顿科技有限公司	OSG-105F	OPTO-SENS	22+23+	DIP-4	38469	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市芯祺盛科技有限公司	OSG-105F	OPTO	1846+	DIP4	63000	原装现货!随时可以看货!一片起卖!	询价
瀚佳科技(深圳)有限公司	OSG-105F	OPTO-SENSOR	21+		65200		询价
艾睿国际（香港）有限公司	OSG3DA7331A	OptoSupply(光谷)	2112+	Through Hole	115000	1000个/袋一级代理专营品牌!原装正品,优势现货,长	询价
讯运(深圳/上海)电子有限公司	OSG3DA7331A	OptoSupply(光谷)	2021+	Through Hole	1746		询价
深圳市弘扬芯城科技有限公司	OSG50402C1C	OptoSupply(光谷)	23+	0402	6000		询价

更多OSG07N65F供应商更新时间2024-5-1 9:02:00

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