丝印：OPA828；Package：SOIC(D)；OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: – 0.1 pA (DGN) – 1 pA (D) • Input offset voltage: – 25 μV (DGN) – 50 μV (D) • Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) • MUX-friend

文件：3.08485 Mbytes 页数：47 Pages

TI

德州仪器

丝印：OPA828；Package：SOIC(D)；OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: – 0.1 pA (DGN) – 1 pA (D) • Input offset voltage: – 25 μV (DGN) – 50 μV (D) • Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) • MUX-friend

文件：3.08485 Mbytes 页数：47 Pages

TI

德州仪器

INA828 50-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Precision Instrumentation Amplifier Evolution: – Second Generation: INA828 – First Generation: INA128 • Low Offset Voltage: 50 μV, MAX • Gain Drift: 5 ppm/°C (G = 1), 50 ppm/°C (G > 1) • Noise: 7 nV/√Hz • Bandwidth: 2 MHz (G = 1), 260 kHz (G = 100) • Stable with 1-nF Capaciti

文件：1.68827 Mbytes 页数：40 Pages

TI

德州仪器

INA828 50-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Precision Instrumentation Amplifier Evolution: – Second Generation: INA828 – First Generation: INA128 • Low Offset Voltage: 50 μV, MAX • Gain Drift: 5 ppm/°C (G = 1), 50 ppm/°C (G > 1) • Noise: 7 nV/√Hz • Bandwidth: 2 MHz (G = 1), 260 kHz (G = 100) • Stable with 1-nF Capaciti

文件：1.68827 Mbytes 页数：40 Pages

TI

德州仪器