丝印：O2；Package：SOT-23；SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

文件：30.32 Kbytes 页数：1 Pages

Zetex

丝印：O2；Package：DO-214AA；Schottky Barrier Diode

●Features High reliability Small power mold type Low VF ●Application General rectification

文件：2.97023 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：O2；Package：DSBGA；TLV3801, TLV3802, TLV3811(C) 225-ps High-Speed Comparators with LVDS Outputs

1 Features • Low propagation delay: 225 ps • Low overdrive dispersion: 5 ps • Quiescent current: 17 mA • High toggle frequency: 3 GHz /6 Gbps • Narrow pulse width detection capability: 240 ps • LVDS output • Split input and output ground reference • Single supply voltage: 2.7 V to 5.25 V

文件：2.84875 Mbytes 页数：39 Pages

TI

德州仪器

丝印：O2；Package：DSBGA；TLV3801, TLV3811(C) 225-ps High-Speed Comparator with LVDS Outputs

1 Features • Low propagation delay: 225 ps • Low overdrive dispersion: 5 ps • Quiescent current: 20 mA • High toggle frequency: 3 GHz / 6 Gbps • Narrow pulse width detection capability: 240 ps • LVDS output • Split input and output ground reference • Single supply voltage: 2.7 V to 5.25 V

文件：2.5813 Mbytes 页数：34 Pages

TI

德州仪器

丝印：O2726；Package：TSSOP8；Dual N-ch 20V Fast Switching MOSFETs

Description The FKO2726 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The FKO2726 meet the RoHS and Green Product requirement with full function reliability approved.

文件：713.58 Kbytes 页数：6 Pages

FETEK

台湾东沅

丝印：O2732；Package：TSSOP8；Dual N-ch 20V Fast Switching MOSFETs

Description The FKO2732 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The FKO2732 meet the RoHS and Green Product requirement with full function reliability approved.

文件：696.44 Kbytes 页数：6 Pages

FETEK

台湾东沅

丝印：O2742；Package：TSSOP8；Dual N-ch 20V Fast Switching MOSFETs

Description The FKO2742 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The FKO2742 meet the RoHS and Green Product requirement with full function reliability approved.

文件：653.15 Kbytes 页数：6 Pages

FETEK

台湾东沅

丝印：O2140A；Package：SOIC；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：2.3877 Mbytes 页数：49 Pages

TI

德州仪器

丝印：O2140A；Package：SOIC；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：2.3877 Mbytes 页数：49 Pages

TI

德州仪器

丝印：O2140；Package：SON；OPAx140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz, JFET Op Amps

1 Features • Very-low offset drift: 1 μV/°C maximum • Very-low offset: 120 μV • Low input bias current: 10 pA maximum • Very-low 1/f noise: 250 nVPP, 0.1 Hz to 10 Hz • Low noise: 5.1 nV/√Hz • Slew rate: 20 V/μs • Low supply current: 2 mA maximum • Input voltage range includes V– supply •

文件：2.3877 Mbytes 页数：49 Pages

TI

德州仪器