NXH

45 W Auxiliary Power Supply for White Goods and Industrial Equipment with NCP11187A65

NXH003P120M3F2PTHG

丝印：NXH003P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH003P120M3F2PTHGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features •3m/1200VM3SSiCMOSFETHalf−Bridge •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−

NXH003P120M3F2PTNG

丝印：NXH003P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

TheNXH003P120M3F2PTNGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithSi3N4DBCin anF2package. Features •3m/1200VM3SSiCMOSFETHalf−Bridge •Si3N4DBC •Thermistor •Pre−AppliedThermalInterfaceMaterial(TIM) •Press−FitPins •These

NXH004P120M3F2PTHG

丝印：NXH004P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH004P120M3F2PTHGisapowermodulecontaining4m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features •4m/1200VM3SSiCMOSFETHalf−Bridge •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−

NXH004P120M3F2PTNG

丝印：NXH004P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

TheNXH004P120M3F2PTNGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithSi3N4DBCin anF2package. Features •4m/1200VM3SSiCMOSFETHalf−Bridge •Si3N4DBC •Thermistor •Pre−AppliedThermalInterfaceMaterial(TIM) •Press−FitPins •These

NXH006P120M3F2PTHG

丝印：NXH006P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH006P120M3F2PTHGisapowermodulecontaining6m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features 6m/1200VM3SSiCMOSFETHalf−Bridge HPSDBC Thermistor Pre−AppliedThermalInterfaceMaterial(TIM) Press−FitPins TheseDevic

NXH006P120M3F2PTHG

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package; • Excellent FOM [ = Rdson * Eoss ]\n• 15V to 18V Gate Drive\n• 6 mohm / 1200 V M3S SiC MOSFET Half−Bridge\n• These Devices are Pb−Free, Halide Free and are RoHS Compliant\n\n;

The NXH006P120M3F2PTHG is a power module containing 6 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 15V-18V gate drive.\n\n

NXH006P120MNF2PTG

丝印：NXH006P120MNF2PTG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

TheNXH006P120MNF2isapowermodulecontainingan6m/ 1200VSiCMOSFEThalf−bridgeandathermistorinanF2package. Features •6m/1200VSiCMOSFETHalf−Bridge •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM •OptionswithSo

NXH006P120MNF2PTG_V01

Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

TheNXH006P120MNF2isapowermodulecontainingan6m/ 1200VSiCMOSFEThalf−bridgeandathermistorinanF2package. Features •6m/1200VSiCMOSFETHalf−Bridge •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM •OptionswithSo

NXH007F120M3F2PTHG

丝印：NXH007F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

TheNXH007F120M3F2PTHGisapowermodulecontaining 7m/1200VSiCMOSFETfull−bridgeandathermistorwithHPS DBCinanF2package. Features •7m/1200VM3SSiCMOSFETFull−Bridge •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−Ap