丝印：NX1029X；Package：SOT666；60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

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60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

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60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)\n• AEC-Q101 qualified;

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