单 P 沟道，增强模式功率 MOSFET，-20V，-10A，14mΩ

Power MOSFET −10 Amps, −20 Volts\nP−Channel Enhancement−Mode\nSingle SOIC−8 Package • Ultra Low RDS(on)\n• Higher Efficiency Extending Battery Life\n• Logic Level Gate Drive\n• Miniature SO-8 Surface Mount Package\n• Diode Exhibits High Speed, Soft Recovery\n• Avalanche Energy Specified\n• SOIC-8 Mounting Information Provided;

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安森美半导体

Power MOSFET -10 Amps, -20 Volts P?묬hannel Enhancement?묺ode Single SO?? Package

MOSFET – Power, Single, P-Channel, Enhancement Mode, SOIC-8 -10 Amps, -20 Volts Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature SOIC−8 Surface Mount Package • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified

文件：92.28 Kbytes 页数：6 Pages

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P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON)

文件：1.69462 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

文件：1.025819 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET ??0 Amps, ??0 Volts P?묬hannel Enhancement?묺ode

文件：180.7 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 Amps, ??0 Volts P?묬hannel Enhancement?묺ode

文件：180.7 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 Amps, ??0 Volts P?묬hannel Enhancement?묺ode

文件：180.7 Kbytes 页数：6 Pages

ONSEMI

安森美半导体