High Voltage Network Dividers

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德键电子

Power MOSFET 20 V, 285 mA, N?묬hannel with ESD Protection, SOT??23

Features • Enables High Density PCB Manufacturing • 44 Smaller Footprint than SC−89 and 38 Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH)

文件：60.56 Kbytes 页数：5 Pages

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安森美半导体

Power MOSFET 20 V, 285 mA, N?묬hannel with ESD Protection, SOT??23

Features • Enables High Density PCB Manufacturing • 44 Smaller Footprint than SC−89 and 38 Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH)

文件：60.56 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 285 mA, N?묬hannel with ESD Protection, SOT??23

Features • Enables High Density PCB Manufacturing • 44 Smaller Footprint than SC−89 and 38 Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH)

文件：60.56 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 890 mA, Single N?묬hannel with ESD Protection, SOT??23

MOSFET – Power, Single, N-Channel with ESD Protection, SOT-723 20 V, 890 mA Features • N−Channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 890 mA, Single N?묬hannel with ESD Protection, SOT??23

MOSFET – Power, Single, N-Channel with ESD Protection, SOT-723 20 V, 890 mA Features • N−Channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 890 mA, Single N?묬hannel with ESD Protection, SOT??23

MOSFET – Power, Single, N-Channel with ESD Protection, SOT-723 20 V, 890 mA Features • N−Channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.25 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23

Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • P−channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC−89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23

Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • P−channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC−89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23

Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • P−channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC−89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体