Silicon Complementary Transistors General Purpose High Gain Amplifier

Absolute Maximum Ratings: (TA = +25°C) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NTE

Integrated Circuit Dual Voltage Comparator

Description: The NTE911 is a dual, differential voltage comparator in a 10−Lead Metal Can type package featuring high accuracy, fast response times, large input voltage range, low power consumption and compatibility with practically all integreated logic forms. When used as a sense amplifier, t

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NTE

Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)

Description: The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic substrate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differentially–connected pair. The transistors of the NTE912 are well suited to a wide va

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NTE

Integrated Circuit Zero-Voltage Switch

Description: The NTE914 zero–voltage switch is a monolithic silicon integrated circuit in a 14–Lead DIP type package designed to control a thyristor in a variety of AC power switching applications for AC input voltages of 24V, 120V, 208/230V, and 277V at 50/60Hz and 400Hz. Features: ● 24V,

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NTE

Integrated Circuit High−Speed Operational Amplifier

Description; The NTE915 is a High−Speed, High−Gain, Monolithic Operational Amplifier. It is intended for use in a wide range of applications where fast signal acquistion or wide bandwidth is required. The NTE915 acquistion or wide bandwidth is required. The NTE915 features fast settling time, h

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NTE

Integrated Circuit High Current, NPN Transistor Array, Common Emitter

Description: The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common–emitter configuration designed for directly driving seven–segment displays and light–emitting diodes (LED)

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NTE

Integrated Circuit Dual, Independent Transistor Array, Differential Amp

Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise an

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NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

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NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

文件：31.39 Kbytes 页数：4 Pages

NTE

Integrated Circuit High Speed Operational Amplifier

Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external

文件：31.39 Kbytes 页数：4 Pages

NTE