Silicon Complementary Transistors General Purpose High Gain Amplifier

Absolute Maximum Ratings: (TA = +25°C) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

文件：19.22 Kbytes 页数：2 Pages

NTE

Integrated Circuit Operational Transconductance Amplifier

Description: The NTE902 has a differential input and a single–ended, push–pull, class A output. In addition there is a bias input for linear gain control, whose transconductance (gm) is directly proportional to the amplifier bias current (IABC). Features: • Slew rate (unity gain, compensated):

文件：25.74 Kbytes 页数：3 Pages

NTE

Integrated Circuit Operational Amplifier

Description: The NTE903 is an operational amplifier in a 12–Lead TO5 type metal can having all the desirable features and chatacteristics of its prototypes plus a lower noise figure and improved characteristics for offset voltage, offset current, bias current, and impedance. Typical Applications

文件：25.79 Kbytes 页数：2 Pages

NTE

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.

文件：30.51 Kbytes 页数：3 Pages

NTE

Integrated Circuit Dual, High Frequency, Differential Amplifier

Description: The NTE906 is an integrated circuit in a 12–Lead TO5 type package consisting of two independent differential amplifiers with associated constant–current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general–purpose devices which e

文件：30.62 Kbytes 页数：3 Pages

NTE

Integrated Circuit Diode Array

Description: The NTE907 consists of six ultra–fast, low capacitance diodes on a common monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a common terminal with the substrate. The NTE907 comes in a 12–Lead TO5 type package. Features: ● Excellent Revers

文件：27.19 Kbytes 页数：3 Pages

NTE

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current

文件：27.97 Kbytes 页数：3 Pages

NTE

Integrated Circuit Diode Transistor Logic (DTL) Dual J-K Flip-Flop

Integrated Circuit Diode Transistor Logic (DTL) Dual J–K Flip–Flop

文件：23.24 Kbytes 页数：3 Pages

NTE

Integrated Circuit Diode Transistor Logic (DTL) Dual J-K Flip-Flop

Integrated Circuit Diode Transistor Logic (DTL) Dual J–K Flip–Flop

文件：23.24 Kbytes 页数：3 Pages

NTE

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current

文件：27.97 Kbytes 页数：3 Pages

NTE