Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

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NTE

Surge Clamping

NTE

Power MOSFET 30 V, 65 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applicat

文件：120.84 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：89.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 64 A, Single N?묬hannel, WDFN8

Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applications

文件：126.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体