NTE129P中文资料Complementary Transistors数据手册NTE规格书
NTE129P规格书详情
描述 Description
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications.Features:
• High VCE Ratings
• Exceptional Power Dissipation Capability
技术参数
- 型号：
NTE129P
- 制造商：
NTE Electronics
- 功能描述：
TRANSISTOR PNP SILICON 100V IC= 1A TO-237 GENERAL PURPOSE AMP
- 功能描述：
Bulk
- 功能描述：
BIPOLAR TRANSISTOR PNP -80V
- 功能描述：
BIPOLAR TRANSISTOR, PNP, -80V
- 功能描述：
BIPOLAR TRANSISTOR, PNP, -80V; Transistor
- Polarity：
PNP; Collector Emitter Voltage
- V(br)ceo：
80V; Transition Frequency Typ
- ft：
50MHz; Power Dissipation
- Pd：
850mW; DC Collector
- Current：
-1A; DC Current Gain
- hFE：
300; No. of
- Pins：
3
- 功能描述：
Trans GP BJT PNP 80V 1A 3-Pin TO-237
