Silicon Small Signal Schottky Diode

Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications.

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NTE

General Purpose

NTE

Integrated Circuit TV Video IF Amplifier

Features: • High Power Gain: 48dB Typ @ f = 58MHz • AGC Operating by External DC Control Voltage • High Gain Reduction: 60dB Min @ f = 58MHz • Low Reverse Transfer Admittance: 1.0µmho Typ @ f = 58MHz • Nearly Constant Input and Output Admittance Over Entire AGC Range

文件：22.9 Kbytes 页数：2 Pages

NTE

Integrated Circuit TV Video IF Amplifier

Features:\n• High Power Gain: 48dB Typ @ f = 58MHz\n• AGC Operating by External DC Control Voltage\n• High Gain Reduction: 60dB Min @ f = 58MHz\n• Low Reverse Transfer Admittance: 1.0µmho Typ @ f = 58MHz\n• Nearly Constant Input and Output Admittance Over Entire AGC Range

NTE