isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 37A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.28 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK

文件：102.75 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，150V，37A，50 mΩ

N-Channel Enhancement-Mode D2PAK • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Avalanche Energy Specified\n• IDSSand RDS (on) Specified at elevated temperature\n• Mounting information provided for the D2PAK package;

ONSEMI

安森美半导体

Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode D2PAK

文件：102.75 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N?묬hannel Enhancement?묺ode D2PAK

文件：86.37 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 150V (D-S) MOSFET

文件：1.00593 Mbytes 页数：8 Pages

VBSEMI

微碧半导体