256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 页数：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 页数：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 页数：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 页数：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 页数：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

文件：2.68082 Mbytes 页数：76 Pages

NANOAMP

256Mb DDR Synchronous DRAM

Description\nNT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process.\nThe 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The d • DDR 256M bit, die C, based on 110nm design rules\n• Double data rate architecture: two data transfers per clock cycle\n• Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver\n• DQS is edge-aligned with data for reads and is center alig;

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