NPN Multi-Chip

Dual-Chip NPN General-Purpose Amplifier • This Device is Designed for General−purpose High Voltage Amplifier\n• Reduces Board Space\n• Reduces Board Space\n;

ONSEMI

安森美半导体

Dual-Chip NPN General-Purpose Amplifier

Features • This Device is Designed for General−purpose High Voltage Amplifier • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR

文件：109 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN high-voltage transistor

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose • Telephony.

文件：43.66 Kbytes 页数：8 Pages

PHI

飞利浦

NPN high-voltage transistor

1. General description NPN high-voltage transistor in a SOT23 plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 160 V) • AEC-Q101 qualified 3. Applications • General purpose

文件：185.26 Kbytes 页数：8 Pages

NEXPERIA

安世