订购数量 | 价格 |
---|---|
1+ |
首页>NST3904DP6T5G>芯片详情
NST3904DP6T5G_ONSEMI/安森美半导体_两极晶体管 - BJT LESHAN DUAL NPN深宇韬电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
NST3904DP6T5G
- 功能描述:
两极晶体管 - BJT LESHAN DUAL NPN
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
相近型号
- NST1001-QDNR
- NST3906F3T5G
- NSSW100DT
- NST3946
- NSS60601MZ4T1G
- NST3946DP6T5G
- NSS60601MZ4T
- NST3946DXV6T1G
- NSS60601MZ4
- NST3946DXV6T5G
- NSS60600MZ4T3G
- NST45011MW6T1G
- NSS60600MZ4T1G
- NST489AMT1G
- NSS60600MZ4
- NST65010MW6T1G
- NSS60201SMTTBG
- NST65011MW6T1G
- NSS60201LT1G
- NST846BF3T5G
- NSS60200SMTTBG
- NST847BDP6T5G
- NSS60200LT1G
- NST847BF3T5G
- NSS60200DMTTBG
- NST847BPDP6T5G
- NSS60101DMTTBG
- NST848BF3T5G
- NSS60101DMR6T1G
- NST856BF3T5G
- NSS60100DMTTBG
- NST857BDP6T5G
- NSS40601CF8T1G
- NST857BF3T5G
- NSS40600CF8T1G
- NSTB1002DXV5T1G
- NSS40501UW3T2G
- NSTB1004DXV5T1G
- NSS40500UW3T2G
- NSTB1005DXV5T1G
- NSS40301MZ4T3G
- NSTB60BDW1T1G
- NSS40301MZ4T1G
- NSTR4501NT1G
- NSS40301MDR2G
- NSV12100UW3TCG
- NSS40300MZ4T3G
- NSV12100XV6T1G
- NSS40300MZ4T1G
- NSV12200LT1G