NRVBS330T3G分立半导体产品的二极管-整流器-单规格书PDF中文资料

NRVBS330T3G属于分立半导体产品的二极管-整流器-单。由安森美半导体公司制造生产的NRVBS330T3G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

(0.5 V Max @ 3.0 A, TJ = 25°C)

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard-Ring for Stress Protection

• Device Passes ISO 7637 Pulse #1

• SBRS8 and NRVB Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant