SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125C Operating Junct

文件：185.02 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：LDO REGULATOR, ULTRA-LOW NOISE,

ONSEMI

安森美半导体

Light Emitting Diode (LED) Diffused Red, Blinking

文件：73.48 Kbytes 页数：2 Pages

NTE

HALLOGIC HALL EFFECT SENSORS

[Optek] Description: The OHN3030U and OHS3030U each contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation wi

文件：281.31 Kbytes 页数：2 Pages

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Hallogic Hall-effect Sensors

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

文件：620.38 Kbytes 页数：9 Pages

Optek