Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：301.4 Kbytes 页数：6 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：301.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：301.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarit

文件：107.18 Kbytes 页数：5 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarit

文件：101.3 Kbytes 页数：5 Pages

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安森美半导体

1.0 A, 40 V, Schottky Power Rectifier, Surface Mount

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bent Leads\n• Automotive Grade and PPAP Capable\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Very Low Forward Voltage Drop\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case: Epoxy, Mol;

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安森美半导体

Surface Mount Schottky Power Rectifier

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安森美半导体

Package：DO-214AC，SMA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1A 40V 1201 SMA2

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安森美半导体

Package：DO-214AC，SMA；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMA

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安森美半导体