Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

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安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

文件：303.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

1.0 A, 30 V, Schottky Power Rectifier, Surface Mount

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. The Schottky Rectifier features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling d • Compact Package with J-Bend Leads Ideal for Automated Handling\n• Automotive Grade and PPAP Capable\n• Highly Stable Oxide Passivated Junction\n• Guardring for Over-Voltage Protection\n• Low Forward Voltage DropMechanical Characteristics:\n• Case: Molded Epoxy\n• Epoxy Meets UL94, VO at 1/8\"\n• W;

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安森美半导体

Package：DO-214AC，SMA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1A 30V 1201 SMA2

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安森美半导体