Suitable for linear and saturated applications

文件：1.54461 Mbytes 页数：9 Pages

MA-COM

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

MA-COM

GaN Wideband Transistor 48 V, 45 W

The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mob ·GaN on Si HEMT D-Mode Transistor\n·55 % Drain Efficiency at 2.5 GHz\n·100 % RF Tested\n·TO-272 Package\n·RoHS* Compliant and 260°C reflow compatible\n·16.5 dB Gain at 2.5 GHz\n·48 V Operation\n·Tunable from DC - 2.5 GHz\n·Suitable for linear and saturated applications;

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Package：TO-272BC；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 48V 50W DC-2.2GHZ

MACOM Technology Solutions

Suitable for linear and saturated applications

文件：1.54461 Mbytes 页数：9 Pages

MA-COM

Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT

文件：951.47 Kbytes 页数：4 Pages

MA-COM

Suitable for linear and saturated applications

文件：1.54461 Mbytes 页数：9 Pages

MA-COM

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR NPT2021

MACOM Technology Solutions