Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT

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Next generation high power RF semiconductor technology

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Industry Standard Plastic Package

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GaN Amplifier 50 V, 12 W, DC-3.5 GHz

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. For load-pull data and non-linear models, please send ·Suitable for Linear and Saturated Applications\n·Industry Standard Plastic Package\n·48V Operation\n·Tunable from DC-6 GHz\n·High Drain Efficiency (>60%);

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DC-6 GHz HEMT

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